5秒后页面跳转
XP0D873|XP1D873 PDF预览

XP0D873|XP1D873

更新时间: 2024-12-01 23:33:55
品牌 Logo 应用领域
其他 - ETC 二极管
页数 文件大小 规格书
3页 79K
描述
Composite Device - Diodes - Composite Diodes

XP0D873|XP1D873 数据手册

 浏览型号XP0D873|XP1D873的Datasheet PDF文件第2页浏览型号XP0D873|XP1D873的Datasheet PDF文件第3页 
Composite Transistors  
XP0D873 (XP1D873)  
Silicon N-channel junction FET  
Unit: mm  
+0.05  
0.12  
–0.02  
0.20 0.05  
5
For analog switching  
4
3
Features  
Two elements incorporated into one package  
Reduction of the mounting area and assembly cost by one half  
1
2
0.65 0.65  
1.3 0.1  
2.0 0.1  
Basic Part Number  
2SK1103 × 2  
10˚  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Gate-drain surrender voltage  
Drain current  
Symbol  
VGDS  
ID  
Rating  
50  
Unit  
V
1: Source (FET1)  
2: Drain  
3: Source (FET2)  
EIAJ: SC-88A  
4: Gate (FET2)  
5: Gate (FET1)  
30  
mA  
mA  
mW  
°C  
Gate current  
IG  
10  
SMini5-G1 Package  
Total power dissipation  
Channel temperature  
Storage temperature  
PT  
150  
Marking Symbol: OC  
Tch  
150  
Internal Connection  
Tstg  
55 to +150  
°C  
5
4
FET1  
FET2  
1
2
3
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VGDS  
IDSS  
Conditions  
IC = −10 µA, VDS = 0  
Min  
Typ  
Max  
Unit  
V
Gate-drain surrender voltage  
Drain-source cutoff current  
Gate-source cutoff current  
Gate-source cutoff voltage  
Drain-source ON resistance  
Mutual conductance  
50  
VDS = 10 V, VGS = 0  
0.2  
6.0  
10  
3.5  
mA  
nA  
V
IGSS  
VGS = −30 V, VDS = 0  
VDS = 10 V, ID = 10 µA  
VDS = 10 mV, VGS = 0  
VDS = 10 V, ID = 1 mA, f = 1 kHz  
VGSC  
RDS(on)  
gm  
1.5  
300  
2.5  
7
1.8  
mS  
pF  
VDS  
= 10 V, VGS = 0, f = 1 MHz  
Short-circuit forward transfer  
capacitance (Common-source)  
Ciss  
Short-circuit output capacitance  
(Common-source)  
Coss  
Crss  
1.5  
1.5  
pF  
pF  
Reverse transfer capacitance  
(Common-source)  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: December 2003  
SJJ00223BED  
1

与XP0D873|XP1D873相关器件

型号 品牌 获取价格 描述 数据表
XP0D874(XP1D874) ETC

获取价格

Composite Device - Composite Transistors
XP0D874|XP1D874 ETC

获取价格

Composite Device - Composite Transistors
XP0NG8A PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-88,
XP1 ZORAN

获取价格

Embedded XHTML-Print Interpreter
XP1000 MIMIX

获取价格

17.0-24.0 GHz GaAs MMIC Power Amplifier
XP1000-BD-000V MIMIX

获取价格

Wide Band Medium Power Amplifier, 17000MHz Min, 24000MHz Max, ROHS COMPLIANT, DIE-13
XP1000-BD-000W MIMIX

获取价格

Wide Band Medium Power Amplifier, 17000MHz Min, 24000MHz Max, ROHS COMPLIANT, DIE-13
XP1001 MIMIX

获取价格

26.0-40.0 GHz GaAs MMIC Power Amplifier
XP1001-BD-000V MIMIX

获取价格

Wide Band Low Power Amplifier, 26000MHz Min, 40000MHz Max, ROHS COMPLIANT, DIE-13
XP1001-BD-000W MIMIX

获取价格

Wide Band Low Power Amplifier, 26000MHz Min, 40000MHz Max, ROHS COMPLIANT, DIE-13